New InGaAs/InP avalanche photodiode structure for the 1-1.6 µm wavelength region

Abstract

Low dark current and low multiplication noise properties for an In <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</inf> Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.47</inf> As/InP avalanche photodiode are described. The diode is prepared with an In <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</inf> Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.47</inf> As light absorption layer and an InP avalanche multiplication region. The lowest dark current density of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5.2 \times 10^{-4}</tex> A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> is obtained at 90 percent of a breakdown voltage. Multiplication noise power is proportional to the 2.7th power of the current multiplication factor. Impact ionization coefficient by holes is larger by 2-3 times than that by electrons in