A. Scavennec - Concepedia

Author

A. Scavennec

Also Known As

A. SCAVENNEC, A. Scavennec, Andre Scavennec, André SCAVENNEC, André Scavennec, Scavennec, A., Scavennec, Andre, Scavennec, André

108

Publications

963

Citations

H-Index

Concepts

All Affiliations

III V Lab Thales (France)Orange (France)Alcatel Lucent (Germany)Centre National de la Recherche Scientifique

About

A. Scavennec is an author at III V Lab specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	19	712
2	Applied Physics	12	14	328
3	Computer Engineering	7	7	426
4	Chemical Engineering	1	1	18
5	Chemistry	1	1	18

A. Scavennec

Publications

763

Citations

H-Index

Page 1

	Year	Citations
A transport network layer based on optical network elements G.R. Hill, P.J. Chidgey, F. Kaufhold, Journal of Lightwave Technology Free-space Optical NetworkNetwork DesignNetwork ScienceOptical Network LayerEngineering	1993	277
Submicron InP DHBT Technology for High-Speed High-Swing Mixed-Signal ICs J. Godin, Virginie Nodjiadjim, M. Riet, Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium Critical Thermal BehaviorElectrical EngineeringEngineeringRf SemiconductorAdvanced Packaging (Semiconductors)	2008	73
Mismatch effects in synchronous pumping of the continuously operated mode-locked dye laser A. Scavennec Optics Communications Optical PumpingPhotonicsMode-locked Dye LaserEngineeringSynchronous Pumping	1976	62
Science and technology challenges in XXIst century optical communications E. Desurvire, C. Kazmierski, F. Lelarge, Comptes Rendus Physique	2011	51
Diffused epitaxial GaAlAs-GaAs heterojunction bipolar transistor for high-frequency operation D. Ankri, A. Scavennec, C. Besombes, Applied Physics Letters Transition FrequenciesSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	1982	33
100 Gb/s Operation of an AlGaInAs Semi-Insulating Buried Heterojunction EML C. Kazmierski, A. Konczykowska, F. Jorge, Aluminium NitridePhotonicsElectrical EngineeringEngineeringOptical Properties	2009	31
InP MIS transistors with grown-in sulphur dielectric G. Post, P. Dimitriou, A. Scavennec, Electronics Letters Electrical EngineeringEngineeringPhysicsNanoelectronicsApplied Physics	1983	28
Semiconductor technologies for higher frequencies A. Scavennec, M. Sokolich, Y. Baeyens IEEE Microwave Magazine Semiconductor PropertiesElectrical EngineeringEngineeringRf SemiconductorOscillators	2009	26
Reduction of Recombination Velocity on GaAs Surface by Ga‐S and As‐S Bond‐Related Surface States from ( NH 4 ) 2 S x Treatment H. Sik, Y. Feurprier, Christophe Cardinaud, Journal of The Electrochemical Society Wide-bandgap SemiconductorOptical MaterialsEngineeringSemiconductor MaterialsOptoelectronic Devices	1997	25
A triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications Hassan Maher, J. Décobert, A. Falcou, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringRf SemiconductorNanoelectronicsElectronic Engineering	1999	20

Page 1