The growth and characterization of device quality InP/ Ga1-xinxasyp1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium - Concepedia

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The growth and characterization of device quality InP/ Ga1-xinxasyp1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium

35

Citations

16

References

1986

Year

A. Mircéa, R. Mellet, B. Rose, D. Robein, H. Thibierge, G. Leroux, P. Dasté, S. Godefroy, P. Ossart, A.M. Pougnet

Journal of Electronic Materials

Materials ScienceIi-vi SemiconductorEngineeringAtmospheric-pressure MovpeApplied PhysicsMultilayer HeterostructuresMolecular Beam Epitaxy

References

	Year	Citations

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