Concepedia

The growth and characterization of device quality InP/ Ga1-xinxasyp1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium

A. Mircéa, R. Mellet, B. Rose, D. Robein, H. Thibierge, G. Leroux, P. Dasté, S. Godefroy, P. Ossart, A.M. Pougnet

Journal of Electronic Materials · 1986 · 35 citations · 16 references

DOI

Concepts

References

16

Mechanism of carbon incorporation in MOCVD GaAs

T. F. Kuech, E. Veuhoff · Journal of Crystal Growth · 1984 · 226 citations

, , +12

A critical appraisal of growth mechanisms in MOVPE

G. B. Stringfellow · Journal of Crystal Growth · 1984 · 169 citations

, , +4

Energy bandgap and lattice constant contours of iii–v quaternary alloys

Tildon H. Glisson, John R. Hauser, M. A. Littlejohn et al. · Journal of Electronic Materials · 1978 · 164 citations

, , +16

OMVPE growth of InP using TMIn

Chun-Sen Hsu, R. M. Cohen, G. B. Stringfellow · Journal of Crystal Growth · 1983 · 74 citations

, , +1

Organometallic vapor phase epitaxial growth of high purity GaInAs using trimethylindium

Chia-Chen Kuo, J. S. Yuan, R. M. Cohen et al. · Applied Physics Letters · 1984 · 74 citations

, , +16