Influence of boron on tin induced interdiffusion in GaAs-Ga0.72Al0.28As superlattices

Abstract

By performing different annealing treatments on variously tin-doped molecular beam epitaxially grown GaAs-Ga0.72Al0.28As quantum well structures, we show here the following: (i) tin, like other donor atoms silicon and sulfur, also induces disordering by enhancing interdiffusion coefficients, and (ii) a voluntary introduction of boron atoms in a tin-doped structure prior to annealing leads to a retardation in tin enhanced interdiffusion.