Effects of Be and Si on disordering of the AlAs/GaAs superlattice

Abstract

Effects of Be doping and the interaction of Be and Si on the disordering of 15-nm AlAs/15-nm GaAs superlattices were studied. Be doping of more than 4×1019 cm−3 causes the intermixing of Al and Ga during epitaxial growth and the effect of Be surface accumulation is observed at the growth temperature of 540 °C, while after incorporation of Be in the crystal the annealing of 750 °C, 2 h does not cause any remarkable change in the superlattice structure. Be doping in the Si-doped superlattice shows remarkable suppression of the disordering of superlattice when the Be doping level exceeds that of Si.