N. Duhamel

Influence of growth temperature on Be incorporation in molecular beam epitaxy GaAs epilayers

N. Duhamel, P. Hénoc, F. Alexandre et al. · Applied Physics Letters · 1981 · 43 citations

Engineering, Crystal Growth Technology, Photoluminescence Investigation +17

Further evidence of chromium, manganese, iron, and zinc redistribution in indium phosphide after annealing

M. Gauneau, R. Chaplain, A. Rupert et al. · Journal of Applied Physics · 1985 · 42 citations

Rare Earth Mineral, Engineering, Residual Impurities +16

Investigation of compensation in implanted <i>n</i>-GaAs

E. V. K. Rao, N. Duhamel, P.N. Favennec et al. · Journal of Applied Physics · 1978 · 34 citations

Semiconductor Technology, Electrical Engineering, Ion Implantation +11

Poly-Si Thin Film Transistors Fabricated with Rapid Thermal Annealed Silicon Films

M. Bonnel, N. Duhamel, Mohamed Guendouz et al. · Japanese Journal of Applied Physics · 1991 · 29 citations

Electrical Engineering, Semiconductor Device, Engineering +14

InP MIS transistors with grown-in sulphur dielectric

G. Post, P. Dimitriou, A. Scavennec et al. · Electronics Letters · 1983 · 28 citations

Electrical Engineering, Engineering, Physics +9