G. Post

Passivation of InP using In(PO3)3-condensed phosphates: From oxide growth properties to metal-insulator-semiconductor field-effect-transistor devices

Y. Robach, Marie‐Paule Besland, J. Joseph et al. · Journal of Applied Physics · 1992 · 31 citations

Materials Science, Electrical Engineering, Engineering +14

InP MIS transistors with grown-in sulphur dielectric

G. Post, P. Dimitriou, A. Scavennec et al. · Electronics Letters · 1983 · 28 citations

Electrical Engineering, Engineering, Physics +9

DC-92 GHz ultra-broadband high gain InP HEMT amplifier with 410 GHz gain-bandwidth product

Chafik Meliani, G. Post, G. Rondeau et al. · Electronics Letters · 2002 · 27 citations

Electrical Engineering, Ghz Gain-bandwidth Product, Db Gain +10

New aspects and mechanism of kink effect in InAlAs/InGaAs/InP inverted HFETs

B. Georgescu, M. A. Py, A. Souifi et al. · IEEE Electron Device Letters · 1998 · 26 citations · Full text

Photonics, Electrical Engineering, Engineering +9

A triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications

Hassan Maher, J. Décobert, A. Falcou et al. · IEEE Transactions on Electron Devices · 1999 · 20 citations

Electrical Engineering, Engineering, Rf Semiconductor +11