M. A. Py

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

R. Butté, E. Feltin, M. Gonschorek et al. · Journal of Physics D Applied Physics · 2007 · 328 citations · Full text

Engineering, Materials Science, Physics +17

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

M. Gonschorek, J.‐F. Carlin, E. Feltin et al. · Applied Physics Letters · 2006 · 318 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?

Farid Medjdoub, J.‐F. Carlin, M. Gonschorek et al. · 2006 · 176 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

M. Gonschorek, J.‐F. Carlin, E. Feltin et al. · Journal of Applied Physics · 2008 · 164 citations · Full text

Engineering, Materials Science, Physics +17

Intra- and interlayer contributions to the lattice vibrations in MoO3

M. A. Py, K. Maschke · Physica B+C · 1981 · 126 citations · Full text

Natural Sciences, Materials Science, Physics +13