On the nature of oxides on InP surfaces

G. Hollinger, E. Bergignat, J. Joseph, +1

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Materials ScienceMaterials EngineeringInorganic ChemistrySurface CharacterizationEngineering +12

On the chemistry of passivated oxide–InP interfaces

G. Hollinger, J. Joseph, Y. Robach, +4

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Materials ScienceOxide HeterostructuresSemiconductorsInterface ChemistryEngineering +11

Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001)

Gabriel Delhaye, Clément Merckling, Mario El Kazzi, +6

Journal of Applied Physics

Materials ScienceMaterials EngineeringStructural PropertiesEpitaxial GrowthEngineering +11

New native oxide of InP with improved electrical interface properties

Y. Robach, J. Joseph, E. Bergignat, +3

Applied Physics Letters

Materials ScienceSemiconductorsElectrical EngineeringSemiconductor TechnologyEngineering +9

Spontaneous compliance of the InP∕SrTiO3 heterointerface

G. Saint‐Girons, C. Priester, P. Régreny, +7

Applied Physics Letters

Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringPhysics +13

Epitaxial growth and electrical measurement of single crystalline Pb(Zr0.52Ti0.48)O3 thin film on Si(001) for micro-electromechanical systems

Shi Yin, Gang Niu, Bertrand Vilquin, +4

Thin Solid Films

Materials ScienceElectrical EngineeringEpitaxial GrowthEngineeringCrystal Growth Technology +7

Epitaxial growth of LaAlO3 on Si(001) using interface engineering

Clément Merckling, Gabriel Delhaye, Mario El Kazzi, +9

Microelectronics Reliability

Materials ScienceMaterials EngineeringEngineeringApplied PhysicsMolecular Beam Epitaxy +2

Passivation of InP using In(PO3)3-condensed phosphates: From oxide growth properties to metal-insulator-semiconductor field-effect-transistor devices

Y. Robach, Marie‐Paule Besland, J. Joseph, +6

Journal of Applied Physics

Materials ScienceElectrical EngineeringEngineeringAdequate PassivationNanoelectronics +12

Surface spinodal decomposition in low temperature Al0.48In0.52As grown on InP(001) by molecular beam epitaxy

G. Grenet, M. Gendry, M. Oustric, +6

Applied Surface Science

Materials ScienceSurface Spinodal DecompositionEngineeringMaterial AnalysisCrystal Growth Technology +3

Strain relaxation and critical thickness for epitaxial LaAlO3 thin films grown on SrTiO3(001) substrates by molecular beam epitaxy

Clément Merckling, Mario El Kazzi, Gabriel Delhaye, +6

Journal of Crystal Growth

Materials ScienceCritical ThicknessMaterial AnalysisEngineeringStrain Relaxation +4