New native oxide of InP with improved electrical interface properties

Abstract

The electrical properties of InP insulator interface were improved by using a new native oxide between gate insulator and the semiconductor. This phosphorus-rich oxide identified as In(PO3)y polyphosphate was grown anodically. Capacitance-voltage measurements on this metal-insulator-semiconductor structure yielded an interface state density as low as 4×1010 cm−2 eV−1 and were nearly free of hysteresis in the depletion and accumulation region.