Spontaneous compliance of the InP∕SrTiO3 heterointerface

Abstract

The lattice mismatch between a growing layer and its substrate is a major limitation for heteroepitaxy. Finding solutions to overcome this limitation has given rise to many researches that have up to now not come out any satisfying solution. Here we demonstrate the compliant behavior of the InP∕SrTiO3 (STO) heterointerface. InP islands grown on STO substrates and STO/Si crystalline layers are defect-free, oriented with respect to STO, and have their InP bulk lattice parameter. This contrasts with plastic relaxation mechanisms observed for III-V, Si, or Ge mismatched heterostructures. Compliance occurs spontaneously during the growth and does not require any substrate patterning.