L. Largeau - Concepedia

Author

L. Largeau

Centre National de la Recherche Scientifique

Also Known As

L Largeau, L. Largeau, Largeau, L., Largeau, Ludovic, Ludovic LARGEAU, Ludovic Largeau

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Laboratoire Photonique, Numérique et Nanosciences Orange (France)Sorbonne Université École Polytechnique

About

L. Largeau is an author at Centre National de la Recherche Scientifique specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	35	1.5K
2	Applied Physics	22	35	1.5K
3	Natural Sciences	4	4	345
4	Chemistry	2	2	304
5	Medicine	1	1	17

L. Largeau

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Optical spectroscopy of two-dimensional layered (C_6H_5C_2H_4-NH_3)_2-PbI_4 perovskite K. Gauthron, J-S. Lauret, L. Doyennette, Optics Express Optical MaterialsEngineeringPhotoluminescence ExcitationExciton-phonon InteractionHalide Perovskites	2010	283
Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs R. Teissier, D. Sicault, Jean‐Christophe Harmand, Journal of Applied Physics Pseudomorphic Gaassb LayersEngineeringOptoelectronic DevicesSemiconductorsIi-vi Semiconductor	2001	128
Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN Jean‐Christophe Harmand, G. Ungaro, L. Largeau, Applied Physics Letters Materials EngineeringMaterials ScienceEpitaxial GrowthMolecular-beam EpitaxyEngineering	2000	111
Metamorphic approach to single quantum dot emission at 1.55μm on GaAs substrate Elizaveta Semenova, Richard Hostein, G. Patriarche, Journal of Applied Physics Quantum PhotonicsMetamorphic ApproachEngineeringOptoelectronic DevicesGaas Substrate	2008	65
Structural coherency of epitaxial graphene on 3C–SiC(111) epilayers on Si(111) Abdelkarim Ouerghi, Rachid Belkhou, M. Marangolo, Applied Physics Letters EngineeringSemiconductorsGraphene ExhibitsGraphene-based Nano-antennasElectronic Devices	2010	64
High quality tensile-strained n-doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition R. Jakomin, M. de Kersauson, M. El Kurdi, Applied Physics Letters EngineeringIi-vi SemiconductorIngaas Buffer LayersNanoelectronicsBand Gap Energy	2011	64
Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55μm emission Jean‐Christophe Harmand, G. Ungaro, J.I. Ramos, Journal of Crystal Growth SemiconductorsElectrical EngineeringElectronic DevicesEngineeringApplied Physics	2001	54
Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs Lianhe Li, Vincent Sallet, G. Patriarche, Applied Physics Letters Optical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser Material	2003	52
Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate G. Patriarche, L. Largeau, Jean‐Christophe Harmand, Applied Physics Letters EngineeringGaas SubstrateIi-vi SemiconductorIngaasn Quantum WellsMolecular Beam Epitaxy	2004	49
Effect of nitrogen and temperature on the electronic band structure of GaAs1−xNx alloys R. Chtourou, F. Bousbih, S. Bouzid, Applied Physics Letters Materials ScienceMaterials EngineeringSemiconductorsElectrical EngineeringBand-gap Reduction	2002	42

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