Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN

Abstract

The incorporation of nitrogen in the low percentage range is investigated in a different III–V compound matrix. The materials are grown by molecular-beam epitaxy with a nitrogen radio-frequency plasma source. For equivalent growth conditions, the same rate of N incorporation is found for GaAsN and GaInAsN. However, this N incorporation rate is significantly enhanced in the GaAsSbN alloy. These observations support a discussion on the reactive nitrogen species.