P. Régreny - Concepedia

Author

P. Régreny

Centre National de la Recherche Scientifique

Also Known As

P Regreny, P. REGRENY, P. Regreny, P. Régreny, Philippe Regreny, Regreny, P., Regreny, Philippe

Publications

331

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique École Centrale de Lyon Université Claude Bernard Lyon 1 Institut des Nanotechnologies de Lyon

About

P. Régreny is an author at Centre National de la Recherche Scientifique specializing in engineering, materials science, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	161
2	Applied Physics	7	7	150
3	Electrical Engineering	3	3	72
4	Chemical Engineering	1	1	11
5	Chemistry	1	1	11

P. Régreny

Publications

222

Citations

H-Index

Page 1

	Year	Citations
Spontaneous compliance of the InP∕SrTiO3 heterointerface G. Saint‐Girons, C. Priester, P. Régreny, Applied Physics Letters Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringPhysics	2008	38
Effect of surface preparation and interfacial layer on the quality of SiO2/GaN interfaces Elias Al Alam, Marie‐Paule Besland, A. Goullet, Journal of Applied Physics EngineeringSemiconductorsSurface PreparationElectronic PackagingMaterials Science	2011	36
Unidirectional III-V microdisk lasers heterogeneously integrated on SOI Pauline Mechet, Steven Verstuyft, T. de Vries, Optics Express	2013	34
Compact 1.55 µm room-temperature optically pumped VCSEL using photonic crystal mirror Salim Boutami, Badhise Ben Bakir, P. Régreny, Electronics Letters	2007	27
Band gap tuning of InAs∕InP quantum sticks using low-energy ion-implantation-induced intermixing B. Salem, Vincent Aimez, Denis Morris, Applied Physics Letters Optical MaterialsPoint DefectsEngineeringOptoelectronic DevicesBand Gap	2005	20
Misorientation effect on the monolayer terrace topography of (100) InP substrates annealed under a PH3/H2 ambient and homoepitaxial layers grown by metalorganic chemical vapor deposition V. Merlin, Trần Minh Đức, Ghassan Younes, Journal of Applied Physics EngineeringCrystal Growth TechnologyChemical DepositionMisorientation EffectMolecular Beam Epitaxy	1995	16
Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy Thomas Dursap, Marco Vettori, C. Botella, Nanotechnology Materials ScienceIi-vi SemiconductorElectrical EngineeringAccurate ControlEngineering	2021	16
Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3(001) Jing Cheng, T. Aviles, A. El Akra, Applied Physics Letters Materials SciencePhotonicsOptical MaterialsInp SubstrateEngineering	2009	14
Desorption of ultraviolet-ozone oxides from InP under phosphorus and arsenic overpressures Peter G. Hofstra, Dylan Thompson, B. J. Robinson, Journal of Applied Physics EngineeringAtmospheric PhotochemistryChemistryEnvironmental PhotochemistryChemical Engineering	1995	11
Behaviour of vicinal InP surfaces grown by MOVPE: exploitation of AFM images V. Thévenot, Véronique Soulière, H. Dumont, Journal of Crystal Growth Materials ScienceSurface CharacterizationEngineeringVicinal Inp SurfacesMicroscopy	1997	10

Page 1