DC-92 GHz ultra-broadband high gain InP HEMT amplifier with 410 GHz gain-bandwidth product

Abstract

A coplanar distributed amplifier, fabricated in a double channel InP HEMT technology, is presented. It exhibits a 13 dB gain and a 92 GHz −3 dB cutoff frequency that corresponds to a gain-bandwidth product of 410 GHz. Key aspects for distributed and coplanar design around 100 GHz are highlighted.