Electronics Letters · 2002 · 27 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesPower AmplifiersRadio-frequency Integrated CircuitsCutoff FrequencyDistributed AmplifiersGainGain BandwidthGain-bandwidth ProductHigh-frequency Amplifier DesignHigh-gain AmplifiersWideband Amplifiers
A coplanar distributed amplifier, fabricated in a double channel InP HEMT technology, is presented. It exhibits a 13 dB gain and a 92 GHz −3 dB cutoff frequency that corresponds to a gain-bandwidth product of 410 GHz. Key aspects for distributed and coplanar design around 100 GHz are highlighted.
3
0–90 GHz InAlAs/InGaAs/InP HEMT distributedbaseband amplifier IC
S. Kimura, Yasuhiko Imai, Yukio Umeda et al. · Electronics Letters · 1995 · 45 citations
Engineering, Electrical Engineering, Electronic Materials +12
40 Gbit/s high voltage modulator driver in P-HEMTtechnology
Martin Leich, M. Ludwig, A. Hülsmann et al. · Electronics Letters · 1999 · 14 citations