P. Hénoc - Concepedia

Author

P. Hénoc

Centre National de la Recherche Scientifique

Also Known As

P Henoc, P Hénoc, P. HENOC, P. Henoc, P. Hénoc, Pierre HENOC, Pierre Henoc

Publications

1.5K

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Orange (France)Laboratoire d'Étude des Microstructures Laboratoire d'Analyse et d'Architecture des Systèmes

About

P. Hénoc is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	25	1.3K
2	Applied Physics	19	24	1.3K
3	Chemistry	3	3	178
4	Natural Sciences	2	2	76
5	Health Sciences	1	1	20

P. Hénoc

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
Composition modulation in liquid phase epitaxial In<i>x</i>Ga1−<i>x</i>As<i>y</i>P1−<i>y</i> layers lattice matched to InP substrates P. Hénoc, A. Izraël, M. Quillec, Applied Physics Letters EngineeringMicroscopyCrystal Growth TechnologyElectron MicroscopyQuantum Materials	1982	185
First stages of the MBE growth of InAs on (001)GaAs F. Houzay, C. Guille, J. M. Moison, Journal of Crystal Growth Ii-vi SemiconductorElectrical EngineeringEngineeringMbe GrowthApplied Physics	1987	147
Luminescence in highly conductive <i>n</i>-type ZnSe J.C. Bouley, P. Blanconnier, Amir Herman, Journal of Applied Physics SemiconductorsAluminium NitrideIi-vi SemiconductorPhotoluminescenceEngineering	1975	106
Growth and characterization of undoped ZnSe epitaxial layers obtained by organometallic chemical vapour deposition P. Blanconnier, M. Cerclet, P. Hénoc, Thin Solid Films Materials EngineeringMaterials ScienceIi-vi SemiconductorEngineeringSurface Science	1978	92
Reaction kinetics of molybdenum thin films on silicon (111) surface A. Guivarc’h, P Auvray, L. Berthou, Journal of Applied Physics Materials ScienceSurface CharacterizationEngineeringElectron MicroscopyCrystalline Defects	1978	86
Investigation of crystalline and optical properties of Al0.48In0.52As grown by molecular-beam expitaxy J. P. Praseuth, Leon J. Goldstein, P. Hénoc, Journal of Applied Physics Aluminium NitrideOptical MaterialsEngineeringCrystal Growth TechnologySemiconductor Nanostructures	1987	72
On the formation of binary compounds in Au/InP system A. Piotrowska, P Auvray, A. Guivarc’h, Journal of Applied Physics EngineeringSolid-state ChemistryComputational ChemistryChemistryInorganic Material	1981	60
Metallurgical and electrical properties of chromium silicon interfaces Alexandre Souto Martinêz, D. Estève, A. Guivarc’h, Solid-State Electronics Materials ScienceEngineeringSurface ScienceApplied PhysicsChromium Silicon Interfaces	1980	59
Study of buried silicon nitride layers synthesized by ion implantation P. Bourguet, J. M. Dupart, E. Le Tiran, Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringBuried LayersEngineering	1980	59
Influence of cw laser scan speed in solid-phase crystallization of amorphous Si film on Si3N4/glass substrate G. Auvert, D. Bensahel, Aurélien Georges, Applied Physics Letters Solid-phase CrystallizationSi FilmsOptical MaterialsEngineeringCrystal Growth Technology	1981	55

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