J. M. Moison

Self-organized growth of regular nanometer-scale InAs dots on GaAs

J. M. Moison, F. Houzay, F. Barthe et al. · Applied Physics Letters · 1994 · 927 citations

Materials Science, Semiconductors, Strained Structures +14

Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures

J. M. Moison, C. Guille, F. Houzay et al. · Physical review. B, Condensed matter · 1989 · 417 citations

Engineering, Surface Segregation, Ii-vi Semiconductor +16

First stages of the MBE growth of InAs on (001)GaAs

F. Houzay, C. Guille, J. M. Moison et al. · Journal of Crystal Growth · 1987 · 147 citations

Ii-vi Semiconductor, Electrical Engineering, Engineering +5

Optical investigation of the self-organized growth of InAs/GaAs quantum boxes

Jean‐Michel Gérard, J. B. Genin, J. Lefebvre et al. · Journal of Crystal Growth · 1995 · 126 citations

Quantum Science, Photonics, Optical Materials +8

Epitaxial regrowth of an InAs surface on InP: An example of artificial surfaces

J. M. Moison, M. Bensoussan, F. Houzay · Physical review. B, Condensed matter · 1986 · 87 citations

Engineering, Chemistry, Band Gap +18