J. M. Moison - Concepedia

Author

J. M. Moison

Centre National de la Recherche Scientifique

Also Known As

J Moison, J. M. MOISON, J. M. Moison, J. ‐M. Moison, J.-M. Moison, J.M Moison, J.M. Moison, J.‐M. MOISON, Jean-Marie Moison, Moison, Jean-Marie

Publications

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Orange (France)Télécom Paris Chimie ParisTech

About

J. M. Moison is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	39	2.7K
2	Applied Physics	23	37	2.7K
3	Natural Sciences	3	3	139
4	Chemical Engineering	3	3	51
5	Medicine	1	1	62

J. M. Moison

Publications

2.7K

Citations

H-Index

Page 1

	Year	Citations
Self-organized growth of regular nanometer-scale InAs dots on GaAs J. M. Moison, F. Houzay, F. Barthe, Applied Physics Letters Materials ScienceSemiconductorsStrained StructuresEpitaxial GrowthEngineering	1994	927
Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures J. M. Moison, C. Guille, F. Houzay, Physical review. B, Condensed matter EngineeringSurface SegregationIi-vi SemiconductorTernary AlloysMolecular Beam Epitaxy	1989	417
First stages of the MBE growth of InAs on (001)GaAs F. Houzay, C. Guille, J. M. Moison, Journal of Crystal Growth Ii-vi SemiconductorElectrical EngineeringEngineeringMbe GrowthApplied Physics	1987	147
Optical investigation of the self-organized growth of InAs/GaAs quantum boxes Jean‐Michel Gérard, J. B. Genin, J. Lefebvre, Journal of Crystal Growth Quantum SciencePhotonicsOptical MaterialsEngineeringPhysics	1995	126
Epitaxial regrowth of an InAs surface on InP: An example of artificial surfaces J. M. Moison, M. Bensoussan, F. Houzay Physical review. B, Condensed matter EngineeringChemistryBand GapInas SurfaceEpitaxial Growth	1986	87
Surface segregation in III–V alloys J. M. Moison, F. Houzay, F. Barthe, Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringSurface ScienceApplied Physics	1991	87
Atomic-scale roughness of GaAs/AlAs interfaces: A Raman scattering study of asymmetrical short-period superlattices B. Jusserand, F. Mollot, J. M. Moison, Applied Physics Letters Materials ScienceAluminium NitrideIi-vi SemiconductorEngineeringPhysics	1990	71
Near-field optical imaging of light propagation in semiconductor waveguide structures S. Bourzeix, J. M. Moison, F. Mignard, Applied Physics Letters EngineeringMicroscopyWave OpticOptic DesignOptical Metrology	1998	62
Intermixing at InAs/GaAs and GaAs/InAs interfaces C. Guille, F. Houzay, J. M. Moison, Surface Science Mixed-signal Integrated CircuitGaas/inas InterfacesApplied Physics	1987	59
Laser-induced order–disorder transition of the (100)InP surface J. M. Moison, M. Bensoussan Journal of Vacuum Science and Technology EngineeringLaser ScienceLaser ApplicationsLaser MaterialSurface-emitting Lasers	1982	59

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