M. Bensoussan - Concepedia

Author

M. Bensoussan

Centre National de la Recherche Scientifique

Also Known As

M Bensoussan, M. A. Bensoussan, M. BENSOUSSAN, M. Bensoussan, Marcel Bensoussan

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Orange (France)Laboratoire de physique des Solides Institut Supérieur de l'Électronique et du Numérique Sorbonne Université

About

M. Bensoussan is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	22	619
2	Applied Physics	15	21	602
3	Chemistry	6	6	172
4	Natural Sciences	3	3	128
5	Electrical Engineering	2	2	63

M. Bensoussan

Publications

658

Citations

H-Index

Page 1

	Year	Citations
Epitaxial regrowth of an InAs surface on InP: An example of artificial surfaces J. M. Moison, M. Bensoussan, F. Houzay Physical review. B, Condensed matter EngineeringChemistryBand GapInas SurfaceEpitaxial Growth	1986	87
Laser-induced order–disorder transition of the (100)InP surface J. M. Moison, M. Bensoussan Journal of Vacuum Science and Technology EngineeringLaser ScienceLaser ApplicationsLaser MaterialSurface-emitting Lasers	1982	59
Electronic properties of the InP(100) surface J. M. Moison, M. Bensoussan Surface Science Materials ScienceSurface CharacterizationEngineeringSurface AnalysisSurface Science	1986	41
Commensurate and incommensurate phase transitions of the (001) InAs surface under changes of bulk lattice constant, As chemical potential, and temperature J. M. Moison, C. Guille, M. Bensoussan Physical Review Letters EngineeringElectronic StructureQuantum MaterialsMaterial PhysicChemical Potential	1987	41
Buildup of III-V-compound semiconductor heterojunctions: Structural and electronic properties of monolayer-thick III-V overlayers on III-V substrates J. M. Moison, C. Guille, M. Van Rompay, Physical review. B, Condensed matter Crystal StructureEngineeringMonolayer-thick Iii-v OverlayersElectronic PropertiesMolecular-beam Epitaxy	1989	40
Influence of the near-band-edge surface states on the luminescence efficiency of InP J. M. Moison, M. Van Rompay, M. Bensoussan Applied Physics Letters Materials ScienceSurface DensitiesIi-vi SemiconductorSurface CharacterizationEngineering	1986	35
Raman scattering and local order in GexSe 1 -x glasses for 1/3 ≤ x ≤ 1/2 P. Tronc, M. Bensoussan, Alain Brenac, Journal de physique Materials ScienceOptical MaterialsEngineeringPhysicsRaman Scattering	1977	32
Laser-induced surface reconstruction of semiconductors and metals J. M. Moison, M. Bensoussan Surface Science SemiconductorsEngineeringLaser-induced Surface ReconstructionSemiconductor LasersApplied Physics	1983	31
Anomalous bonding in SiO<sub>2</sub> at the SiO<sub>2</sub>–Si interface G. Hollinger, E. Bergignat, Henry Chermette, Philosophical Magazine B Oxide HeterostructuresEngineeringAnomalous BondingPhysicsNatural Sciences	1987	29
Photoemission yield under two-quantum excitation in Si M. Bensoussan, J. M. Moison, B. Stoesz, Physical review. B, Condensed matter PhotonicsQuantum ScienceFlux ProportionalEngineeringPhotoluminescence	1981	26

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