F. Houzay

Self-organized growth of regular nanometer-scale InAs dots on GaAs

J. M. Moison, F. Houzay, F. Barthe et al. · Applied Physics Letters · 1994 · 928 citations

Natural Sciences, Materials Science, Physics +17

Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures

J. M. Moison, C. Guille, F. Houzay et al. · Physical review. B, Condensed matter · 1989 · 418 citations

Natural Sciences, Materials Science, Physics +17

First stages of the MBE growth of InAs on (001)GaAs

F. Houzay, C. Guille, J. M. Moison et al. · Journal of Crystal Growth · 1987 · 147 citations

Engineering, Materials Engineering, Materials Science +12

Atomic and Electronic Structure of the 7 × 7 Reconstructed Si (111) Surface

D. J. Chadi, R. S. Bauer, R. H. Williams et al. · Physical Review Letters · 1980 · 89 citations

Natural Sciences, Materials Science, Physics +17

Epitaxial regrowth of an InAs surface on InP: An example of artificial surfaces

J. M. Moison, M. Bensoussan, F. Houzay · Physical review. B, Condensed matter · 1986 · 87 citations

Engineering, Materials Engineering, Materials Science +17