First stages of the MBE growth of InAs on (001)GaAs

Electron Microscopy of Thin Crystals

Nature · 1963 · 4K citations

Natural Sciences, Materials Science, Physics +10

Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices

Leon J. Goldstein, Frank Glas, J. Y. Marzin et al. · Applied Physics Letters · 1985 · 893 citations

Natural Sciences, Materials Engineering, Materials Science +17

Nucleation and strain relaxation at the InAs/GaAs(100) heterojunction

W. J. Schaffer, Morten Lind, S. P. Kowalczyk et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1983 · 152 citations

Engineering, Materials Science, Physics +17

Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures

F. J. Grunthaner, M. Y. Yen, R. Fernandez et al. · Applied Physics Letters · 1985 · 75 citations

Engineering, Materials Science, Physics +17

GaAs/AlAs layered films

A. C. Gossard · Thin Solid Films · 1979 · 65 citations