Laser-induced order–disorder transition of the (100)InP surface

Abstract

The first investigation of laser-processed (100)InP surfaces is reported. Under irradiation by a pulsed (3 ns) green laser, above a threshold fluence of 0.2 J/cm2, both stoichiometry and structure of the surface are altered: Matter departure from the surface takes place, together with a transition towards a (1×1) LEED pattern which is attributed to a surface formed by (1×1) terraces and a random array of steps. At higher fluences, desorption increases and a fully disordered surface is obtained. A comparison with the results obtained on other semiconductors and implications for future studies are outlined.