Composition modulation in liquid phase epitaxial In<i>x</i>Ga1−<i>x</i>As<i>y</i>P1−<i>y</i> layers lattice matched to InP substrates

P. Hénoc, A. Izraël, M. Quillec, +1

Applied Physics Letters

EngineeringMicroscopyCrystal Growth TechnologyElectron MicroscopyQuantum Materials +18

Growth conditions and characterization of InGaAs/GaAs strained layers superlattices

M. Quillec, Leon J. Goldstein, G. Le Roux, +2

Journal of Applied Physics

SemiconductorsMaterials ScienceLayer ThicknessIngaas CompositionEngineering +7

Blue shift of the absorption edge in AlGaInAs-GaInAs superlattices: Proposal for an original electro-optical modulator

J. Bleuse, P. Voisin, M. Allovon, +1

Applied Physics Letters

EngineeringOptical Transmission SystemAdjacent WellsOptical AmplifierEffective Absorption Edge +16

In<i>x</i>Ga1−<i>x</i>As<i>y</i>P1−<i>y</i> alloy stabilization by the InP substrate inside an unstable region in liquid phase epitaxy

M. Quillec, C. Daguet, J.L. Benchimol, +1

Applied Physics Letters

EngineeringCrystal Growth TechnologyQuantum MaterialsUnstable RegionMolecular Beam Epitaxy +15

Liquid phase epitaxy of unstable alloys: Substrate-induced stabilization and connected effects

M. Quillec, H. Launois, M. C. Joncour

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

EngineeringCrystal Growth TechnologyIngaasp AlloySemiconductorsIi-vi Semiconductor +17

The effect of substrate orientation on the liquid-solid distribution coefficients for Ga<i>x</i>In1−<i>x</i>As in the temperature range 600–700 °C

T. P. Pearsall, M. Quillec, M. A. Pollack

Applied Physics Letters

Materials ScienceTemperature Range 600–700EngineeringInterfacial PhenomenonLiquid-solid Distribution Coefficients +9

Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Yang Qiu, F. Cristiano, Karim Huet, +8

Nano Letters

Materials ScienceIon ImplantationEngineeringDislocation InteractionPhysics +10

Defect evolution and dopant activation in laser annealed Si and Ge

F. Cristiano, Mohammad Reza Shayesteh, Ray Duffy, +10

Materials Science in Semiconductor Processing

EngineeringPhysicsApplied PhysicsDefect FormationSemiconductor Device Fabrication +5

Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy

J. P. Praseuth, M. C. Joncour, Jean‐Michel Gérard, +2

Journal of Applied Physics

Materials ScienceAluminium NitrideIi-vi SemiconductorOptical MaterialsMolecular-beam Epitaxy +13

Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device properties

Geok Ing Ng, D. Pavlidis, M. Quillec, +3

Applied Physics Letters

Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringActive ChannelTransconductance Enhancement +11