Journal of Applied Physics · 1984 · 112 citations · 7 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsSemiconductor Thin FilmsCompositionMolecular Beam EpitaxyPhotoluminescenceStrain EffectsStrained Layer StructuresSuperlattice GrowthSuperlatticesTemperature-dependent Growth
InGaAs/GaAs strained layers superlattices have been grown by molecular beam epitaxy on GaAs. The best growth temperature was found to be 520–540 °C from photoluminescence measurements. Double x-ray diffraction was performed. It shows very good agreement with the kinematical theory. This technique proves to be of particular interest for such structures: a single profile leads to reliable and complete information on layer thickness and InGaAs composition.
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Defects in epitaxial multilayers
J. W. Matthews, A. E. Blakeslee · Journal of Crystal Growth · 1976 · 594 citations