J. Burgeat

Growth conditions and characterization of InGaAs/GaAs strained layers superlattices

M. Quillec, Leon J. Goldstein, G. Le Roux et al. · Journal of Applied Physics · 1984 · 112 citations

Semiconductors, Materials Science, Layer Thickness +9

Effect of Alpha Irradiation on the X-Ray Diffraction Profiles of Silicon Single Crystals

J. Burgeat, R. Colella · Journal of Applied Physics · 1969 · 33 citations

Engineering, Nuclear Physics, Silicon On Insulator +18

X-ray diffraction studies of thermal treatment of GaAs/InGaAs strained-layer superlattices

M. C. Joncour, M. N. Charasse, J. Burgeat · Journal of Applied Physics · 1985 · 27 citations · Full text

Materials Science, Semiconductors, Gaas/ingaas Strained-layer Superlattices +12

Breakdown of translational symmetry at the 300°C ferroelastic transition of barium sodium niobate

J. Burgeat, J. C. Tolédano · Solid State Communications · 1976 · 23 citations

Materials Science, Magnetic Properties, Ferromagnetism +11

Growth and characterization of In<i>x</i>Ga1−<i>x</i>As/In<i>y</i>Ga1−<i>y</i>As strained-layer superlattice on InP substrate

M. Quillec, J. Y. Marzin, J. Primot et al. · Journal of Applied Physics · 1986 · 20 citations

Materials Science, Epitaxial Growth, Optical Materials +14