M. N. Charasse

Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices

Leon J. Goldstein, Frank Glas, J. Y. Marzin et al. · Applied Physics Letters · 1985 · 887 citations

Materials Science, Ii-vi Semiconductor, Inas/gaas Superlattices +11

Raman study of an epitaxial GaAs layer on a Si [100] substrate

Yihe Huang, Peter Y. Yu, M. N. Charasse et al. · Applied Physics Letters · 1987 · 61 citations

Electrical Engineering, Epitaxial Growth, Engineering +13

1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxy

Pierre Galtier, Jean-Paul Pocholle, M. N. Charasse et al. · Applied Physics Letters · 1989 · 45 citations

Optical Materials, Engineering, Erbium-doped Gaas +18

Time-resolved photoluminescence spectroscopy from erbium-doped Ga0.55Al0.45As

T. Benyattou, D. Seghier, G. Guillot et al. · Applied Physics Letters · 1991 · 30 citations

Time-resolved Photoluminescence Spectroscopy, Electronic Excited State, Optical Materials +12

X-ray diffraction studies of thermal treatment of GaAs/InGaAs strained-layer superlattices

M. C. Joncour, M. N. Charasse, J. Burgeat · Journal of Applied Physics · 1985 · 27 citations · Full text

Materials Science, Semiconductors, Gaas/ingaas Strained-layer Superlattices +12