M. N. Charasse

Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices

Leon J. Goldstein, Frank Glas, J. Y. Marzin et al. · Applied Physics Letters · 1985 · 893 citations

Natural Sciences, Materials Engineering, Materials Science +17

Raman study of an epitaxial GaAs layer on a Si [100] substrate

Yihe Huang, Peter Y. Yu, M. N. Charasse et al. · Applied Physics Letters · 1987 · 61 citations

Natural Sciences, Materials Science, Electronic Materials +16

1.54 μm room-temperature electroluminescence of erbium-doped GaAs and GaAlAs grown by molecular beam epitaxy

Pierre Galtier, Jean-Paul Pocholle, M. N. Charasse et al. · Applied Physics Letters · 1989 · 45 citations

Engineering, Electrical Engineering, Materials Science +17

Time-resolved photoluminescence spectroscopy from erbium-doped Ga0.55Al0.45As

T. Benyattou, D. Seghier, G. Guillot et al. · Applied Physics Letters · 1991 · 30 citations

Natural Sciences, Materials Science, Optical Materials +16

X-ray diffraction studies of thermal treatment of GaAs/InGaAs strained-layer superlattices

M. C. Joncour, M. N. Charasse, J. Burgeat · Journal of Applied Physics · 1985 · 27 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17