D. Seghier

Vacancy Defects as Compensating Centers in Mg-Doped GaN

S. Hautakangas, J. Oila, M. Alatalo et al. · Physical Review Letters · 2003 · 134 citations

Investigation of the performance of CsI(Tl) for charged particle identification by pulse-shape analysis

F. Benrachi, B. Chambon, B. Cheynis et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 1989 · 78 citations

Electrical Engineering, Engineering, Radiation Detection +7

Electrical characterization of Mg-related energy levels and the compensation mechanism in GaN:Mg

D. Seghier, H. P. Gíslason · Journal of Applied Physics · 2000 · 36 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Time-resolved photoluminescence spectroscopy from erbium-doped Ga0.55Al0.45As

T. Benyattou, D. Seghier, G. Guillot et al. · Applied Physics Letters · 1991 · 30 citations

Time-resolved Photoluminescence Spectroscopy, Electronic Excited State, Optical Materials +12

Gallium and nitrogen vacancies in GaN: Impurity decoration effects

S. Hautakangas, V. Ranki, Ilja Makkonen et al. · Physica B Condensed Matter · 2006 · 25 citations

Physics, Applied Physics, Gan Power Device +2