H. P. Gíslason

Properties of Zn-doped VPE-grown GaN. I. Luminescence data in relation to doping conditions

B. Ḿonemar, O. Lagerstedt, H. P. Gíslason · Journal of Applied Physics · 1980 · 136 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +19

Vacancy Defects as Compensating Centers in Mg-Doped GaN

S. Hautakangas, J. Oila, M. Alatalo et al. · Physical Review Letters · 2003 · 134 citations

Vacancy defect-induced d0 ferromagnetism in undoped ZnO nanostructures: Controversial origin and challenges

B. Qi, S. Ólafsson, H. P. Gíslason · Progress in Materials Science · 2017 · 102 citations

Materials Science, Magnetism, Ferromagnetism +10

Photoluminescence studies of the 1.911-eV Cu-related complex in GaP

H. P. Gíslason, B. Ḿonemar, P. J. Dean et al. · Physical review. B, Condensed matter · 1982 · 82 citations

1.911-Ev Cu-related Complex, Engineering, Magnetic Resonance +21

Frequency-dependent conductivity in lithium-diffused and annealed GaAs

Halldór Guðfinnur Svavarsson, H. P. Gíslason · Physica B Condensed Matter · 2003 · 77 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +5