In<i>x</i>Ga1−<i>x</i>As<i>y</i>P1−<i>y</i> alloy stabilization by the InP substrate inside an unstable region in liquid phase epitaxy

Abstract

A series of growths from the liquid phase have shown clearly that a large miscibility gap exists in the InxGa1−xAsyP1−y system at relatively high temperatures. The germinations were performed on (100) GaP. Using (100) InP as a substrate, it is shown that the lattice-matched solids are stabilized. This result is believed to be associated with the strain energy induced by the substrate.