Concepedia

Liquid Phase Epitaxy

Liquid Phase Epitaxy is a semiconductor crystal growth technique in which a crystalline thin film is deposited from a molten solution onto a solid substrate under controlled thermodynamic conditions, enabling atomic-layer alignment with the substrate lattice.

1.4K

Publications

51.5K

Citations

3.6K

Authors

679

Institutions

Publications per year

2017–2026

76

Variants

Lpe

Parents

Publications

1.4K

Optical properties of Al<i>x</i>Ga1−<i>x</i> As

D. E. Aspnes, S. M. Kelso, R. A. Logan et al. · Journal of Applied Physics · 1986 · 879 citations

, , +17

JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE

I. Hayashi, M. B. Panish, P. W. Foy et al. · Applied Physics Letters · 1970 · 591 citations

, , +17

A melting model for pulsing-laser annealing of implanted semiconductors

P. Baeri, S. U. Campisano, G. Fóti et al. · Journal of Applied Physics · 1979 · 396 citations

, , +17

Long term operation of high quantum efficiency GaAs(Cs,O) photocathodes using multiple recleaning by atomic hydrogen

D. A. Orlov, C. Krantz, Alexander Wolf et al. · Journal of Applied Physics · 2009 · 378 citations

, , +17

Energy band-gap shift with elastic strain in Ga<i>x</i>In1−<i>x</i>P epitaxial layers on (001) GaAs substrates

Hiromitsu Asai, Kunishige Oe · Journal of Applied Physics · 1983 · 367 citations

, , +17

1–5 of 1.4K

Authors

3.6K

  1. CW
    Christof Wöll

    Karlsruhe Institute of Technology, Germany

    25 publications · 2.8K citations

    22

    h-index

  2. EB
    E. Bauser

    Max Planck Institute for Solid State Research, Germany

    31 publications · 867 citations

    19

    h-index

  3. MN
    M. Nikl

    FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic, Czechia

    25 publications · 732 citations

    19

    h-index

  4. VG
    V. Gorbenko

    Lviv University, Ukraine

    25 publications · 609 citations

    17

    h-index

  5. YZ
    Yu. Zorenko

    Lviv University, Ukraine

    29 publications · 710 citations

    17

    h-index

1–5 of 3.6K

Institutions

679

  1. Centre National de la Recherche Scientifique

    Paris, France

    23 h-index

    187 publications

    5.3K citations

  2. Karlsruhe Institute of Technology

    Karlsruhe, Germany

    23 h-index

    141 publications

    15.6K citations

  3. Rockwell Automation (United States)

    Milwaukee, United States

    22 h-index

    149 publications

    4.7K citations

  4. FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic

    Prague, Czechia

    21 h-index

    85 publications

    2.7K citations

  5. Max Planck Institute for Solid State Research

    Stuttgart, Germany

    20 h-index

    117 publications

    3.7K citations

  6. Massachusetts Institute of Technology

    Cambridge, United States

    19 h-index

    85 publications

    3.7K citations

  7. NTT (Japan)

    Tokyo, Japan

    19 h-index

    70 publications

    3K citations

  8. Fujitsu (Japan)

    Kawasaki, Japan

    19 h-index

    118 publications

    3.7K citations

1–8 of 679

Venues

  1. Journal of Applied Physics

    261 publications · 12K citations

    55

    h-index

  2. Applied Physics Letters

    242 publications · 10K citations

    52

    h-index

  3. Journal of Crystal Growth

    210 publications · 5.5K citations

    38

    h-index

  4. Japanese Journal of Applied Physics

    JJAP · 74 publications · 1.7K citations

    23

    h-index

  5. Journal of The Electrochemical Society

    JES · 45 publications · 1.6K citations

    21

    h-index

1–5