I. Hayashi - Concepedia

Author

I. Hayashi

NEC (Japan)

Also Known As

Hayashi, I., I Hayashi, I. HAYASHI, I. Hayashi, Ikuo HAYASHI

Publications

2.6K

Citations

H-Index

Concepts

All Affiliations

NEC (Japan)

About

I. Hayashi is an author at NEC (Japan) specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	24	2.3K
2	Applied Physics	21	23	2.2K
3	Electrical Engineering	9	9	595
4	Medicine	1	1	15
5	Allergy	1	1	15

I. Hayashi

Publications

2.5K

Citations

H-Index

Page 1

	Year	Citations
JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE I. Hayashi, M. B. Panish, P. W. Foy, Applied Physics Letters PhotonicsSquare DiodesEngineeringLaser ScienceSemiconductor Lasers	1970	588
GaAs–Al<i>x</i>Ga1−<i>x</i>As Double Heterostructure Injection Lasers I. Hayashi, M. B. Panish, F. K. Reinhart Journal of Applied Physics Optical MaterialsEngineeringLaser ApplicationsLaser MaterialLasing Mode	1971	197
DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2 M. B. Panish, I. Hayashi, S. Sumski Applied Physics Letters Optical PumpingPhotonicsEngineeringHigh GainPhysics	1970	150
A low-threshold room-temperature injection laser I. Hayashi, M. B. Panish, P. W. Foy IEEE Journal of Quantum Electronics PhotonicsEngineeringLaser ScienceApplied PhysicsLaser Applications	1969	147
GaAs–Ga<i>x</i>Al1−<i>x</i>As Heterostructure Injection Lasers which Exhibit Low Thresholds at Room Temperature I. Hayashi, M. B. Panish Journal of Applied Physics Optical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser Material	1970	131
Mode Reflectivity and Waveguide Properties of Double-Heterostructure Injection Lasers F. K. Reinhart, I. Hayashi, M. B. Panish Journal of Applied Physics	1971	123
<i>P-N</i> Junction Formation during Molecular-Beam Epitaxy of Ge-Doped GaAs A. Y. Cho, I. Hayashi Journal of Applied Physics SemiconductorsMaterials ScienceIi-vi SemiconductorSemiconductor TechnologyEngineering	1971	105
Germanium-Doped Gallium Arsenide F.E. Rosztoczy, F. Ermanis, I. Hayashi, Journal of Applied Physics SemiconductorsElectrical EngineeringGaas CrystalsEngineeringPhysics	1970	102
GaAs–Al<i>x</i>Ga1−<i>x</i>As Double Heterostructure Lasers—Effect of Doping on Lasing Characteristics of GaAs E. Pinkas, B.I. Miller, I. Hayashi, Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringLaser ScienceLaser Applications	1972	97
Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasers M. B. Panish, S. Sumski, I. Hayashi Metallurgical Transactions Materials ScienceEngineeringMultilayer LpeHeterostructure LasersApplied Physics	1971	84

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