DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2

Abstract

Double-heterostructure AlxGa1−xAs–GaAs– AlxGa1−xAs injection lasers with room-temperature thresholds as low as 2300 A/cm2 have been prepared by solution epitaxy. These lasers have high gain and a low temperature coefficient of the threshold up to the highest temperatures measured, 380 °K.