Concepedia

Double Heterostructure Devices

Double Heterostructure Devices is a semiconductor device architecture in which a narrow bandgap material is sandwiched between two wider bandgap materials to confine both charge carriers and optical fields, thereby enhancing radiative recombination efficiency in quantum well systems.

887

Publications

39.3K

Citations

2.6K

Authors

451

Institutions

Publications per year

2017–2026

41

Parents

Publications

887

Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

Minjoo Larry Lee, Eugene A. Fitzgerald, Mayank T. Bulsara et al. · Journal of Applied Physics · 2004 · 957 citations

, , +17

JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE

I. Hayashi, M. B. Panish, P. W. Foy et al. · Applied Physics Letters · 1970 · 591 citations

, , +17

Epitaxial III−V Nanowires on Silicon

Thomas Mårtensson, C P T Svensson, Brent A. Wacaser et al. · Nano Letters · 2004 · 576 citations

, , +17

Calculated spontaneous emission factor for double-heterostructure injection lasers with gain-induced waveguiding

K. Petermann · IEEE Journal of Quantum Electronics · 1979 · 560 citations

, , +16

Laser action in organic semiconductor waveguide and double-heterostructure devices

V. G. Kozlov, Vladimir Bulović, P. E. Burrows et al. · Nature · 1997 · 490 citations

, , +16

1–5 of 887

Authors

2.6K

  1. WT
    W. T. Tsang

    AT&T (United States), United States

    23 publications · 810 citations

    17

    h-index

  2. RL
    R. L. Hartman

    Nokia (United States), United States

    19 publications · 964 citations

    16

    h-index

  3. RW
    R. W. Dixon

    Texas State University, United States

    14 publications · 717 citations

    14

    h-index

  4. RA
    R. A. Logan

    AT&T (United States), United States

    13 publications · 655 citations

    13

    h-index

  5. TL
    T. L. Paoli

    Palo Alto Research Center, United States

    12 publications · 918 citations

    12

    h-index

1–5 of 2.6K

Institutions

451

  1. Massachusetts Institute of Technology

    Cambridge, United States

    26 h-index

    93 publications

    9K citations

  2. AT&T (United States)

    Bedminster, United States

    20 h-index

    107 publications

    2.9K citations

  3. MIT Lincoln Laboratory

    Lexington, United States

    19 h-index

    71 publications

    4.7K citations

  4. NTT (Japan)

    Tokyo, Japan

    19 h-index

    89 publications

    3.7K citations

  5. Fujitsu (Japan)

    Kawasaki, Japan

    19 h-index

    151 publications

    4.5K citations

  6. NEC (Japan)

    Tokyo, Japan

    16 h-index

    88 publications

    4.2K citations

  7. Rockwell Automation (United States)

    Milwaukee, United States

    15 h-index

    44 publications

    2.8K citations

  8. Nokia (United States)

    Coppell, United States

    15 h-index

    53 publications

    1.4K citations

1–8 of 451

Venues

  1. Applied Physics Letters

    238 publications · 13.1K citations

    59

    h-index

  2. Journal of Applied Physics

    95 publications · 5.5K citations

    37

    h-index

  3. IEEE Journal of Quantum Electronics

    80 publications · 4.5K citations

    35

    h-index

  4. Japanese Journal of Applied Physics

    JJAP · 44 publications · 1.4K citations

    25

    h-index

  5. IEEE Electron Device Letters

    40 publications · 1.7K citations

    23

    h-index

1–5