R. L. Hartman - Concepedia

Author

R. L. Hartman

Nokia (United States)

Also Known As

R L Hartman, R. Hartman, R. L. Hartman, R.L Hartman, R.L. Hartman, Robert Hartman, Robert L Hartman, Robert L. Hartman

123

Publications

3.3K

Citations

H-Index

139

Concepts

All Affiliations

Nokia (United States)Columbia University Linfield College AT&T (United States)IBM (United States)

About

R. L. Hartman is an author at Nokia (United States) specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	32	57	3K
2	Natural Sciences	9	9	443
3	Health Sciences	2	2	48
4	Medicine	2	2	72
5	Education	1	1	26

R. L. Hartman

Publications

3.2K

Citations

H-Index

Page 1

	Year	Citations
Defect structure introduced during operation of heterojunction GaAs lasers P. M. Petroff, R. L. Hartman Applied Physics Letters PhotonicsEngineeringDislocation InteractionCrystalline DefectsSemiconductor Lasers	1973	311
Temperature Dependence of the Low-Field Galvanomagnetic Coefficients of Bismuth R. L. Hartman Physical Review Superconducting MaterialEngineeringBismuth-based SuperconductorsTemperature DependenceMagnetic Resonance	1969	225
Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasers P. M. Petroff, R. L. Hartman Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorEngineeringDislocation InteractionCrystalline Defects	1974	169
Degradation of CW GaAs double-heterojunction lasers at 300 K B.C. De Loach, B.W. Hakki, R. L. Hartman, Proceedings of the IEEE PhotonicsLight OutputOptical MaterialsEngineeringLaser Science	1973	158
Reliability of DH GaAs lasers at elevated temperatures R. L. Hartman, R. W. Dixon Applied Physics Letters PhotonicsElectrical EngineeringEngineeringDh Gaas LasersLaser Science	1975	145
Improved light-output linearity in stripe-geometry double-heterostructure (Al,Ga)As lasers R. W. Dixon, F. R. Nash, R. L. Hartman, Applied Physics Letters Optical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser Physics	1976	111
Continuously operated (Al,Ga)As double-heterostructure lasers with 70 °C lifetimes as long as two years R. L. Hartman, N. E. Schumaker, R. W. Dixon Applied Physics Letters EngineeringLaser ScienceMedian LifetimeLaser ApplicationsLaser Physics	1977	101
Strain-induced degradation of GaAs injection lasers R. L. Hartman, A.R. Hartman Applied Physics Letters PhotonicsAdvanced Laser ProcessingStrain FieldsEngineeringBirefringence Study	1973	96
Simple picosecond pulse generation scheme for injection lasers Chinlon Lin, P.L. Liu, T. C. Damen, Electronics Letters	1980	86
Continuous room-temperature operation of GaAs-Al<i>x</i>Ga1−<i>x</i>As double-heterostructure lasers prepared by molecular-beam epitaxy A. Y. Cho, R. W. Dixon, H. C. Casey, Applied Physics Letters EngineeringLaser ScienceLaser ApplicationsLaser MaterialOptoelectronic Devices	1976	81

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