Proceedings of the IEEE · 1973 · 158 citations · 8 references
EngineeringElectrical EngineeringOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptical Properties Of SemiconductorsOptoelectronic DevicesSemiconductor DefectsSemiconductor HeterostructuresSemiconductor LasersSemiconductor ReliabilityDouble Heterostructure DevicesDouble HeterostructuresHeterojunction DevicesHeterojunctionsHeterostructure Lasers
Identification of a major failure mechanism in stripe-geometry proton-bombarded double-heterojunction lasers is reported. This mechanism consists of the formation of localized "dark lines" in the optical cavity, coinciding with a decrease in light output. The dark lines are aligned in 〈100〉 crystallographic directions.
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Rapid zinc diffusion in gallium arsenide
R. L. Longini · Solid-State Electronics · 1962 · 222 citations