JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE

I. Hayashi, M. B. Panish, P. W. Foy, +1

Applied Physics Letters

PhotonicsSquare DiodesEngineeringLaser ScienceSemiconductor Lasers +9

A low-threshold room-temperature injection laser

I. Hayashi, M. B. Panish, P. W. Foy

IEEE Journal of Quantum Electronics

PhotonicsEngineeringLaser ScienceApplied PhysicsLaser Applications

Doping interface dipoles: Tunable heterojunction barrier heights and band-edge discontinuities by molecular beam epitaxy

Federico Capasso, Alfred Y. Cho, K. Mohammed, +1

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringPhotocollection EfficiencySemiconductor MaterialsOptoelectronic Devices +17

GaAs–Al<i>x</i>Ga1−<i>x</i>As Double Heterostructure Lasers—Effect of Doping on Lasing Characteristics of GaAs

E. Pinkas, B.I. Miller, I. Hayashi, +1

Journal of Applied Physics

Wide-bandgap SemiconductorOptical MaterialsEngineeringLaser ScienceLaser Applications +19

Uniform Silicon <i>p-n</i> Junctions. I. Broad Area Breakdown

R. L. Batdorf, A. G. Chynoweth, G. C. Dacey, +1

Journal of Applied Physics

EngineeringUniform JunctionsSilicon On InsulatorSemiconductor DeviceSemiconductors +16

Investigation of heterojunctions for MIS devices with oxygen-doped Al<i>x</i>Ga1−<i>x</i>As on <i>n</i>-type GaAs

H. C. Casey, A. Y. Cho, D. V. Lang, +2

Journal of Applied Physics

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering +13

Phase-matched second harmonic generation in a periodic GaAs waveguide

J. P. van der Ziel, M. Ilegems, P. W. Foy, +1

Applied Physics Letters

Optical MaterialsEngineeringLaser ScienceLaser ApplicationsHigh-power Lasers +14

Reduction of threshold current density in GaAs–Al<i>x</i> Ga1−<i>x</i> As heterostructure lasers by separate optical and carrier confinement

M. B. Panish, H. C. Casey, S. Sumski, +1

Applied Physics Letters

Optical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser Material +21

Electroluminescent recombination near the energy gap in GaP diodes

M. Gershenzon, R. M. Mikulyak, R. A. Logan, +1

Solid-State Electronics

Electrical EngineeringPhotoluminescenceEngineeringApplied PhysicsGap Diodes +1

Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxy

A.Y. Cho, H. C. Casey, C. Radice, +1

Electronics Letters

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEpitaxial GrowthEngineering +12