P. W. Foy

JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE

I. Hayashi, M. B. Panish, P. W. Foy et al. · Applied Physics Letters · 1970 · 588 citations

Photonics, Square Diodes, Engineering +11

A low-threshold room-temperature injection laser

I. Hayashi, M. B. Panish, P. W. Foy · IEEE Journal of Quantum Electronics · 1969 · 147 citations

Photonics, Engineering, Laser Science +2

Doping interface dipoles: Tunable heterojunction barrier heights and band-edge discontinuities by molecular beam epitaxy

Federico Capasso, Alfred Y. Cho, K. Mohammed et al. · Applied Physics Letters · 1985 · 130 citations

Wide-bandgap Semiconductor, Engineering, Photocollection Efficiency +19

GaAs–Al<i>x</i>Ga1−<i>x</i>As Double Heterostructure Lasers—Effect of Doping on Lasing Characteristics of GaAs

E. Pinkas, B.I. Miller, I. Hayashi et al. · Journal of Applied Physics · 1972 · 97 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +21

Uniform Silicon <i>p-n</i> Junctions. I. Broad Area Breakdown

R. L. Batdorf, A. G. Chynoweth, G. C. Dacey et al. · Journal of Applied Physics · 1960 · 87 citations

Engineering, Uniform Junctions, Silicon On Insulator +18