Hans–Albert Rupprecht

Electron microscope studies of an alloyed Au/Ni/Au-Ge ohmic contact to GaAs

T. S. Kuan, P. E. Batson, Thomas N. Jackson et al. · Journal of Applied Physics · 1983 · 232 citations

Engineering, Materials Engineering, Materials Science +17

EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1-<i>x</i>Al<i>x</i>As <i>p-n</i> JUNCTIONS GROWN BY LIQUID-PHASE EPITAXY

Hans–Albert Rupprecht, J. M. Woodall, G. D. Pettit · Applied Physics Letters · 1967 · 149 citations

Engineering, Electrical Engineering, Materials Science +17

EFFICIENT ELECTROLUMINESCENCE FROM GaAs DIODES AT 300°K

Hans–Albert Rupprecht, J. M. Woodall, K. Konnerth et al. · Applied Physics Letters · 1966 · 114 citations

Engineering, Electrical Engineering, Materials Science +12

Effect of temperature on the stimulated emission from GaAs p-n junctions

M. H. Pilkuhn, Hans–Albert Rupprecht, Susanne Blum · Solid-State Electronics · 1964 · 82 citations

Engineering, Electrical Engineering, Physics +12

Optical and Electrical Properties of Epitaxial and Diffused GaAs Injection Lasers

M. H. Pilkuhn, Hans–Albert Rupprecht · Journal of Applied Physics · 1967 · 64 citations

Engineering, Electrical Engineering, Materials Science +17