M. H. Pilkuhn

Optical transitions and carrier relaxation in self assembled InAs/GaAs quantum dots

F. Adler, M. Geiger, A. Bauknecht et al. · Journal of Applied Physics · 1996 · 209 citations

Natural Sciences, Materials Science, Electronic Materials +16

Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots

Chi‐Kuang Sun, G. Wang, John E. Bowers et al. · Applied Physics Letters · 1996 · 166 citations

Engineering, Materials Science, Physics +17

Ga<inf>1-x</inf>Al<inf>x</inf>Sb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficients

O. Hildebrand, W. Kuebart, K.W. Benz et al. · IEEE Journal of Quantum Electronics · 1981 · 143 citations

Engineering, Electrical Engineering, Materials Science +15

Auger carrier capture kinetics in self-assembled quantum dot structures

Alexander V. Uskov, John G. McInerney, F. Adler et al. · Applied Physics Letters · 1998 · 119 citations

Natural Sciences, Materials Science, Physics +15

Luminescence and photoconductivity of undoped p-GaSb

W. Jakowetz, W. W. Rühle, K. Breuninger et al. · physica status solidi (a) · 1972 · 111 citations

Natural Sciences, Materials Science, Physics +14