Journal of Applied Physics · 1983 · 232 citations · 8 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsInterface ScienceSemiconductor MaterialsAlloysInterface EngineeringSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor SurfacesTransmission Electron MicroscopyAlloyingContact ResistanceContact Resistance MeasurementInterface ResistanceInterface StructureOhmic ContactsScanning Transmission Electron MicroscopyTransmission Electron Microscopy Of Interfaces
The interface structures resulting from the alloying reactions between a Au/Ni/Au-Ge composite film and a (100) GaAs substrate were studied by transmission electron microscopy and scanning transmission electron microscopy. Electron microscope examinations of the cross-sectional samples prepared in this study offered excellent lateral and depth resolution of local structures which are not available by other analytical techniques used previously in similar studies. The distributions and chemical compositions of various phases formed, and the morphologies of the interfaces between these phases were monitored and compared with the measured contact resistances at three different stages of alloying. A correlation between the interface structure and the contact resistance was found.
8
Alloyed ohmic contacts to GaAs
N. Braslau · Journal of Vacuum Science and Technology · 1981 · 237 citations
Alloying behavior of Ni/Au-Ge films on GaAs
Masaki Ogawa · Journal of Applied Physics · 1980 · 136 citations
Investigation of the AuGeNi system used for alloyed contacts to GaAs
M. Wittmer, R. Pretoriüs, J. W. Mayer et al. · Solid-State Electronics · 1977 · 61 citations