Nonalloyed Ohmic contacts to <i>n</i>-GaAs by molecular beam epitaxy

Abstract

We report the formation of Ohmic contacts to n-GaAs without the need for a high-temperature alloy. Heavily doped n-GaAs(Sn) was grown using molecular beam epitaxy in which the concentration of free carriers was as high as ‖ND−NA‖=6×1019 cm−3 yielding specific contact resistance rc=1.86×10−6 Ω-cm2.