Masaki Ogawa

Alloying behavior of Ni/Au-Ge films on GaAs

Masaki Ogawa · Journal of Applied Physics · 1980 · 136 citations

Materials Engineering, Materials Science, Epitaxial Growth +13

Growth of highly strain-relaxed Ge1−xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method

Shotaro Takeuchi, Yosuke Shimura, Osamu Nakatsuka et al. · Applied Physics Letters · 2008 · 121 citations

Materials Science, Materials Engineering, Epitaxial Growth +13

Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al–Ga–As:Si Solid System –a Novel Short Period AlAs/n-GaAs Superlattice–

T. Baba, Takashi Mizutani, Masaki Ogawa · Japanese Journal of Applied Physics · 1983 · 107 citations

Wide-bandgap Semiconductor, Si Activation Coefficient, Engineering +16

Alloying reaction in thin nickel films deposited on GaAs

Masaki Ogawa · Thin Solid Films · 1980 · 105 citations

Materials Science, Engineering, Applied Physics +4

Degradation of photoluminescence intensity caused by excitation-enhanced oxidation of GaAs surfaces

T. Suzuki, Masaki Ogawa · Applied Physics Letters · 1977 · 84 citations

Gaas Crystals, Optical Materials, Engineering +16