T. Baba

Si Nano-Photodiode with a Surface Plasmon Antenna

Tsutomu Ishi, Junichi Fujikata, Kikuo Makita et al. · Japanese Journal of Applied Physics · 2005 · 334 citations

Plasmonics, Electrical Engineering, Photonics +10

Proposal for Surface Tunnel Transistors

T. Baba · Japanese Journal of Applied Physics · 1992 · 137 citations

Electrical Engineering, Engineering, Tunneling Microscopy +9

Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al–Ga–As:Si Solid System –a Novel Short Period AlAs/n-GaAs Superlattice–

T. Baba, Takashi Mizutani, Masaki Ogawa · Japanese Journal of Applied Physics · 1983 · 107 citations

Wide-bandgap Semiconductor, Si Activation Coefficient, Engineering +16

The Local-Environment-Dependent DX Centers: Evidence for the Single Energy Level with a Specified Configuration

T. Baba, M. Mizuta, T. Fujisawa et al. · Japanese Journal of Applied Physics · 1989 · 93 citations

Hydrostatic Pressure, Engineering, Physics +13

Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors

Hisao Kawaura, Toshitsugu Sakamoto, T. Baba · Applied Physics Letters · 2000 · 89 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +12