T. Baba - Concepedia

Author

T. Baba

NEC (Japan)

Also Known As

Baba, T., Chihiro Suzuki Chihiro Suzuki, T Baba, T. Baba, Toshio BABA, Toshio Baba, Toshio Baba Toshio Baba

143

Publications

2.2K

Citations

H-Index

Concepts

All Affiliations

NEC (Japan)Nagoya University High Energy Accelerator Research Organization Osaka Prefecture University Daido University

About

T. Baba is an author at NEC (Japan) specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	48	1.9K
2	Applied Physics	24	47	1.9K
3	Natural Sciences	3	3	50
4	Medicine	1	1	21
5	Chemistry	1	1	21

T. Baba

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
Si Nano-Photodiode with a Surface Plasmon Antenna Tsutomu Ishi, Junichi Fujikata, Kikuo Makita, Japanese Journal of Applied Physics PlasmonicsElectrical EngineeringPhotonicsEngineeringSurface Plasmon Antenna	2005	334
Proposal for Surface Tunnel Transistors T. Baba Japanese Journal of Applied Physics Electrical EngineeringEngineeringTunneling MicroscopyRf SemiconductorSurface Tunnel Transistors	1992	137
Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al–Ga–As:Si Solid System –a Novel Short Period AlAs/n-GaAs Superlattice– T. Baba, Takashi Mizutani, Masaki Ogawa Japanese Journal of Applied Physics Wide-bandgap SemiconductorSi Activation CoefficientEngineeringOptoelectronic DevicesSemiconductors	1983	107
The Local-Environment-Dependent DX Centers: Evidence for the Single Energy Level with a Specified Configuration T. Baba, M. Mizuta, T. Fujisawa, Japanese Journal of Applied Physics Hydrostatic PressureEngineeringPhysicsEnergy EfficiencyEnergy Management	1989	93
Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors Hisao Kawaura, Toshitsugu Sakamoto, T. Baba Applied Physics Letters Semiconductor TechnologyElectrical EngineeringElectronic DevicesEngineeringTunneling Microscopy	2000	89
Highly polarized electrons from GaAs–GaAsP and InGaAs–AlGaAs strained-layer superlattice photocathodes T. Nishitani, T. Nakanishi, Masaki Yamamoto, Journal of Applied Physics SemiconductorsElectrical EngineeringEngineeringPhysicsGaas–gaasp Cathode	2005	79
Surface charge limit in NEA superlattice photocathodes of polarized electron source Kazuaki Togawa, T. Nakanishi, T. Baba, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment Surface Charge LimitEngineeringPhysicsElectron SpectroscopyApplied Physics	1998	66
Large enhancement of polarization observed by extracted electrons from the AlGaAs-GaAs superlattice T. Omori, Y. Kurihara, T. Nakanishi, Physical Review Letters Large EnhancementPhotonicsElectrical EngineeringSpintronicsQuantum Science	1991	59
Heavily Si-Doped GaAs and AlAs/n-GaAs Superlattice Grown by Molecular Beam Epitaxy Masaki Ogawa, T. Baba Japanese Journal of Applied Physics SemiconductorsMaterials ScienceEngineeringPhysicsSi-doped Gaas	1985	55
Nanofabrication toward sub-10 nm and its application to novel nanodevices J. Sone, Jun‐ichi Fujita, Yukinori Ochiai, Nanotechnology Sub-10 NmEngineeringElectron-beam LithographyNanodevicesPattern Transfer	1999	46

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