Hisao Kawaura

Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors

Hisao Kawaura, Toshitsugu Sakamoto, T. Baba · Applied Physics Letters · 2000 · 89 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +12

Size-exclusion chromatography using self-organized nanopores in anodic porous alumina

Tohru Sano, Noriyuki Iguchi, Kazuhiro Iida et al. · Applied Physics Letters · 2003 · 60 citations

Engineering, Nanoporous Material, Porous Alumina Membrane +19

A Ta<inf>2</inf>O<inf>5</inf> solid-electrolyte switch with improved reliability

Toshitsugu Sakamoto, Naoki Banno, Noriyuki Iguchi et al. · 2007 · 50 citations

Electrical Engineering, Electronic Devices, Solid-electrolyte Switch +14

Switching Property of Atomic Switch Controlled by Solid Electrochemical Reaction

Takuro Tamura, Tsuyoshi Hasegawa, Kazuya Terabe et al. · Japanese Journal of Applied Physics · 2006 · 38 citations

Chemical Engineering, Electrical Engineering, Engineering +15

Direct Tunneling from Source to Drain in Nanometer-Scale Silicon Transistors

Hisao Kawaura, T. Baba · Japanese Journal of Applied Physics · 2003 · 25 citations

Semiconductors, Device Modeling, Electrical Engineering +15