G. D. Pettit - Concepedia

Author

G. D. Pettit

IBM Research - Thomas J. Watson Research Center

Also Known As

G D Pettit, G. D. PETTIT, G. D. Pettit, G. David Pettit, G. Pettit, G. S. Pettit, G.D. Pettit, G.David Pettit, George D. Pettit

148

Publications

6.3K

Citations

H-Index

129

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)Xerox (United States)University of Wisconsin–Madison Brooklyn College

About

G. D. Pettit is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	40	92	5.8K
2	Applied Physics	40	90	5.8K
3	Natural Sciences	14	16	891
4	Chemistry	5	5	286
5	Chemical Engineering	4	4	150

G. D. Pettit

Publications

5.9K

Citations

H-Index

Page 1

	Year	Citations
Structural, Optical, and Electrical Properties of Amorphous Silicon Films M. H. Brodsky, R. S. Title, K. Weiser, Physical review. B, Solid state Materials ScienceSpintronicsOptical MaterialsEngineeringPhysics	1970	515
Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area Eugene A. Fitzgerald, G. P. Watson, R.E. Proano, Journal of Applied Physics EngineeringSevere Plastic DeformationDefect ToleranceSemiconductorsMisfit Dislocations	1989	309
Unpinned (100) GaAs surfaces in air using photochemistry S. D. Offsey, J. M. Woodall, A.C. Warren, Applied Physics Letters SemiconductorsSurface Fermi LevelElectronic DevicesEngineeringInsulator/gaas Interface	1986	211
Some optical properties of the Al<i>x</i>Ga1−<i>x</i>As alloys system B. Ḿonemar, K. K. Shih, G. D. Pettit Journal of Applied Physics Materials ScienceOptical MaterialsX-ray SpectroscopyEngineeringPhysics	1976	209
Exciton Absorption and Emission in InP W. J. Turner, W. Reese, G. D. Pettit Physical Review Optical MaterialsEngineeringAbsorption SpectroscopyExcitation Energy TransferChemistry	1964	208
Ohmic contacts to <i>n</i>-GaAs using graded band gap layers of Ga1−<i>x</i>In<i>x</i>As grown by molecular beam epitaxy J. M. Woodall, J. L. Freeouf, G. D. Pettit, Journal of Vacuum Science and Technology Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesSemiconductorsQuantum Materials	1981	195
An In<sub>0.15</sub>Ga<sub>0.85</sub>As/GaAs pseudomorphic single quantum well HEMT J.J. Rosenberg, Mourad Benlamri, P. D. Kirchner, IEEE Electron Device Letters SemiconductorsQuantum ScienceElectrical EngineeringSemiconductor TechnologyEngineering	1985	194
Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs R. M. Feenstra, J. M. Woodall, G. D. Pettit Physical Review Letters SemiconductorsBulk DefectsArsenic-related Point DefectsIi-vi SemiconductorEngineering	1993	179
ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON B. L. Crowder, R. S. Title, M. H. Brodsky, Applied Physics Letters Electrical EngineeringOptical MaterialsEsr SignalEngineeringPhysics	1970	178
Structure and recombination in InGaAs/GaAs heterostructures Eugene A. Fitzgerald, D. G. Ast, P. D. Kirchner, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	1988	166

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