G. Fóti

A melting model for pulsing-laser annealing of implanted semiconductors

P. Baeri, S. U. Campisano, G. Fóti et al. · Journal of Applied Physics · 1979 · 395 citations

Optical Materials, Engineering, Laser Applications +19

Structural modification of polymer films by ion irradiation

L. Calcagno, Giuseppe Compagnini, G. Fóti · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1992 · 395 citations

Materials Science, Engineering, Polymer Technology +5

Erosion and molecule formation in condensed gas films by electronic energy loss of fast ions

W. L. Brown, W. M. Augustyniak, E. Simmons et al. · Nuclear Instruments and Methods in Physics Research · 1982 · 171 citations

Materials Science, Engineering, Physics +10

Phase Transitions in Amorphous Si Produced by Rapid Heating

P. Baeri, G. Fóti, J. M. Poate et al. · Physical Review Letters · 1980 · 136 citations

Materials Science, Phase Transitions, Ion Implantation +10

Arsenic diffusion in silicon melted by high-power nanosecond laser pulsing

P. Baeri, S. U. Campisano, G. Fóti et al. · Applied Physics Letters · 1978 · 133 citations

Materials Science, Amorphous Silicon Layers, Optical Materials +15