Applied Physics Letters · 2001 · 35 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceOptical MaterialsOptoelectronicsPhotonicsOptical Properties Of SemiconductorsOptical SpectroscopyQuantum OptoelectronicsQuantum Well DevicesQuantum WellsUltrafast OpticsDefect ClustersInteraction Of Heavy Ions With MatterIon Beam IrradiationNonlinear AbsorptionOptical Absorption In Quantum WellsPoint DefectsRelaxation Time MeasurementsSaturation
We have compared light- and heavy-ion irradiation of InGaAs/InAlAs multiple-quantum wells for ultrafast saturable absorption applications. Under heavy-ion impacts, defect clusters were produced, as observed via transmission electronic microscopy. By contrast, in proton-irradiated samples, only point defects were formed. Nonlinear absorption measurements were performed with excitonic resonance pumping. The relaxation time of absorption saturation (minimum value 2 ps) did not depend on the irradiating ion, and was practically independent of the pulse repetition rate (up to 10 GHz) and optical excitation fluence (0.1 mJ/cm2). We conclude that irradiating multiple-quantum wells with light ions is as effective as using heavy ions, when fabricating ultrafast saturable absorber devices operating at high bit rate and near bandedge wavelength.
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Residual defect center in GaInAs/InP films grown by molecular beam epitaxy
S. Loualiche, A. Gauneau, Alain Le Corre et al. · Applied Physics Letters · 1987 · 35 citations