L. Largeau - Concepedia

Author

L. Largeau

Centre National de la Recherche Scientifique

Also Known As

L Largeau, L. Largeau, Largeau, L

Publications

761

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Université Paris-Sud Laboratoire Photonique, Numérique et Nanosciences Université de Poitiers ITMO University

About

L. Largeau is an author at Centre National de la Recherche Scientifique specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	495
2	Applied Physics	10	10	500
3	Materials Science	9	9	479
4	Electrical Engineering	2	2	122
5	Materials Engineering	2	2	153

L. Largeau

Publications

708

Citations

H-Index

Page 1

	Year	Citations
GaNAsSb: how does it compare with other dilute III V-nitride alloys? Jean‐Christophe Harmand, A. Caliman, E. V. K. Rao, Semiconductor Science and Technology Materials EngineeringMaterials ScienceSemiconductorsCarrier LocalizationHigh Bandgap Bowing	2002	100
Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111) L. Largeau, D L Dheeraj, Maria Tchernycheva, Nanotechnology Materials ScienceAluminium NitrideWide-bandgap SemiconductorSemiconductor TechnologyEngineering	2008	93
Core–shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping Maria Tchernycheva, Vladimir Neplokh, H. Zhang, Nanoscale	2015	75
Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires Gwénolé Jacopin, Lorenzo Rigutti, L. Largeau, Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringWide-bandgap SemiconductorEngineering	2011	69
Correlation of optical and structural properties of GaN/AlN core-shell nanowires Lorenzo Rigutti, Gwénolé Jacopin, L. Largeau, Physical Review B Aluminium NitrideEngineeringExciton EnergiesOptoelectronic DevicesSemiconductors	2011	66
Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE Konstantinos Pantzas, Youssef El Gmili, Jeramy Ray Dickerson, Journal of Crystal Growth Materials EngineeringMaterials ScienceElectrical EngineeringSemibulk InganEngineering	2012	53
Confinement of superconducting fluctuations due to emergent electronic inhomogeneities C. Carbillet, S. Caprara, M. Grilli, Physical review. B./Physical review. B	2016	52
Photovoltaic properties of GaAsP core–shell nanowires on Si(001) substrate Maria Tchernycheva, Lorenzo Rigutti, Gwénolé Jacopin, Nanotechnology	2012	50
Deep structural analysis of novel BGaN material layers grown by MOVPE S. Gautier, G. Patriarche, T. Moudakir, Journal of Crystal Growth Materials ScienceWide-bandgap SemiconductorEngineeringSurface ScienceApplied Physics	2010	39
Nondestructive three-dimensional imaging of crystal strain and rotations in an extended bonded semiconductor heterostructure Anastasios Pateras, Marc Allain, P. Godard, Physical Review B Semiconductor HeterostructureEngineeringMicroscopyCrystal StrainOptical Properties	2015	26

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