Maria Tchernycheva

Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires

Xing Dai, Agnès Messanvi, Hezhi Zhang et al. · Nano Letters · 2015 · 204 citations

Materials Science, Large Area, Electrical Engineering +14

M-Plane Core–Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices

Robert Koester, Jun-Seok Hwang, Damien Salomon et al. · Nano Letters · 2011 · 194 citations

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

P. Kandaswamy, F. Guillot, E. Bellet‐Amalric et al. · Journal of Applied Physics · 2008 · 190 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Optical Materials +22

Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors

Maria Tchernycheva, A. Messanvi, Andrés de Luna Bugallo et al. · Nano Letters · 2014 · 185 citations

Engineering, Integrated Photonics, Wide Ingan Segment +19

Nanometer Scale Spectral Imaging of Quantum Emitters in Nanowires and Its Correlation to Their Atomically Resolved Structure

Luiz Fernando Zagonel, Stefano Mazzucco, Marcel Tencé et al. · Nano Letters · 2010 · 183 citations · Full text

Engineering, Microscopy, Optoelectronic Devices +22