Toshiki Makimōto

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimōto · Nature · 2006 · 1.7K citations

Materials Science, Aluminium Nitride, Electrical Engineering +9

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka et al. · Nature · 2012 · 419 citations

Materials Science, Layered Boron, Electrical Engineering +7

Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz

K. Ueda, Makoto Kasu, Y. Yamauchi et al. · IEEE Electron Device Letters · 2006 · 271 citations

Materials Science, Single-crystalline Diamond Fets, Electrical Engineering +14

Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

Kazuhide Kumakura, Toshiki Makimōto, Nobuhiko P. Kobayashi et al. · Applied Physics Letters · 2005 · 223 citations · Full text

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +8

Abrupt <i>p</i>-type doping profile of carbon atomic layer doped GaAs grown by flow-rate modulation epitaxy

Naoki Kobayashi, Toshiki Makimōto, Yoshiji Horíkoshi · Applied Physics Letters · 1987 · 162 citations

Semiconductors, Materials Science, Electrical Engineering +15