Yoshiji Horíkoshi

Statistics

Publications

163

Citations

6.3K

H-Index

Active since

1972

Affiliations

NTT Basic Research Laboratories(Current)

NTT (Japan)

Waseda University

NTT (United States)

Musashino Academia Musicae

Yoshiji Horíkoshi is an author at NTT Basic Research Laboratories specializing in materials science, semiconductor materials, and semiconductor physics.

Publications per year

1972–2012

163

Publications

163

Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy

Yoshiji Horíkoshi, Minoru Kawashima, Hiroshi Yamaguchi · Japanese Journal of Applied Physics · 1986 · 383 citations

Engineering, Materials Engineering, Materials Science +17

Migration-Enhanced Epitaxy of GaAs and AlGaAs

Yoshiji Horíkoshi, Minoru Kawashima, Hiroshi Yamaguchi · Japanese Journal of Applied Physics · 1988 · 366 citations

Engineering, Electrical Engineering, Materials Science +15

Abrupt <i>p</i>-type doping profile of carbon atomic layer doped GaAs grown by flow-rate modulation epitaxy

Naoki Kobayashi, Toshiki Makimōto, Yoshiji Horíkoshi · Applied Physics Letters · 1987 · 162 citations

Engineering, Electrical Engineering, Materials Science +17

Optical Investigation on the Growth Process of GaAs during Migration-Enhanced Epitaxy

Naoki Kobayashi, Yoshiji Horíkoshi · Japanese Journal of Applied Physics · 1989 · 156 citations

Natural Sciences, Materials Science, Physics +15

Growth process of III–V compound semiconductors by migration-enhanced epitaxy

Yoshiji Horíkoshi, Hiroshi Yamaguchi, F. Briones et al. · Journal of Crystal Growth · 1990 · 154 citations

Engineering, Materials Engineering, Materials Science +13

1–5 of 163