Yoshiji Horíkoshi - Concepedia

Author

Yoshiji Horíkoshi

Also Known As

Y Horikoshi, Y. HORIKOSHI, Y. Horikoshi, Yoshiji HORIKOSHI, Yoshiji Horikoshi, Yoshiji Horikoshi Yoshiji Horikoshi, Yoshiji Horíkoshi

399

Publications

7.6K

Citations

H-Index

Concepts

All Affiliations

NTT Basic Research Laboratories NTT (Japan)Waseda University NTT (United States)Musashino Academia Musicae

About

Yoshiji Horíkoshi is an author at NTT Basic Research Laboratories specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	43	156	6.1K
2	Applied Physics	43	154	6.1K
3	Natural Sciences	10	11	337
4	Chemical Engineering	5	5	145
5	Medicine	1	1	24

Yoshiji Horíkoshi

163

Publications

6.2K

Citations

H-Index

Page 1

	Year	Citations
Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy Yoshiji Horíkoshi, Minoru Kawashima, Hiroshi Yamaguchi Japanese Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringLow TemperaturesEngineering	1986	381
Migration-Enhanced Epitaxy of GaAs and AlGaAs Yoshiji Horíkoshi, Minoru Kawashima, Hiroshi Yamaguchi Japanese Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorElectrical EngineeringOptical MaterialsEngineering	1988	365
Abrupt <i>p</i>-type doping profile of carbon atomic layer doped GaAs grown by flow-rate modulation epitaxy Naoki Kobayashi, Toshiki Makimōto, Yoshiji Horíkoshi Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesAtomic Layer Doping	1987	162
Optical Investigation on the Growth Process of GaAs during Migration-Enhanced Epitaxy Naoki Kobayashi, Yoshiji Horíkoshi Japanese Journal of Applied Physics Optical InvestigationOptical MaterialsEngineeringLaser ApplicationsLaser Material	1989	156
Growth process of III–V compound semiconductors by migration-enhanced epitaxy Yoshiji Horíkoshi, Hiroshi Yamaguchi, F. Briones, Journal of Crystal Growth SemiconductorsIii–v Compound SemiconductorsEngineeringApplied PhysicsMolecular Beam Epitaxy	1990	152
Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices Leon J. Goldstein, Yoshiji Horíkoshi, Seigo Tarucha, Japanese Journal of Applied Physics SemiconductorsPhotonicsIi-vi SemiconductorAlas–gaas SuperlatticesGaas Bulk Crystals	1983	150
Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure Lasers Yoshiji Horíkoshi, Yoshitaka Furukawa Japanese Journal of Applied Physics PhotonicsElectrical EngineeringEngineeringLaser SciencePhysics	1979	132
Interface roughness and the dispersion of confined LO phonons in GaAs/AlAs quantum wells Gerhard Fasol, Masaaki Tanaka, H. Sakaki, Physical review. B, Condensed matter EngineeringInterface RoughnessSemiconductor NanostructuresGaas WellsNanoelectronics	1988	128
Flow-Rate Modulation Epitaxy of GaAs Naoki Kobayashi, Toshiki Makimōto, Yoshiji Horíkoshi Japanese Journal of Applied Physics SemiconductorsImpurity AtomsElectrical EngineeringTriethyl GalliumEngineering	1985	110
Surface structure transitions on InAs and GaAs (001) surfaces Hiroshi Yamaguchi, Yoshiji Horíkoshi Physical review. B, Condensed matter SemiconductorsSurface SpeciesElectrical EngineeringIi-vi SemiconductorEngineering	1995	102

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