Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy

Abstract

When Ga or Al atoms are evaporated on a clean GaAs surface in an As-free atmosphere, they are quite mobile and migrate very rapidly along the surface even at low temperatures. This characteristic are utilized for growing high-quality GaAs and AlAs layers at very low temperatures by alternately supplying Ga or Al atoms and As 4 molecules to the GaAs substrate. Applying this method, GaAs layers and AlAs–GaAs quantum well structures with reasonable photoluminescence characteristics are grown at 200°C and 300°C, respectively.